High resolution patterning in organic semiconductors

A Spanish research institution has developed a new method patterning of material characteristics and concomitant final properties, including molecular conformation, orientation, crystallinity and composition. A key part of fabrication of organic semiconductor active layers involve spatial patterning of material characteristics to enable device-specific functionalities. State-of-the-art methods include photolithography, laser induced forward transfer (LIFT), inkjet, lithography, etc. Some of them are fast, some of them have high spatial resolution, nevertheless in large areas or roll-to-roll processing those techniques have limitations such as additive or substractive steps, slow multistep processing, etc. An additional limitation is the fact that several structural features remain unattanaible within one step. This method consists on the solution deposition of a molecular gate interlayer onto the target semiconductor layer, followed by a donor layer comprising functional small molecules. Application of a stimulus such as laser light, activates diffusion of the functional molecules into the semiconductor layer through the molecular gate interlayer. With this new method we can pattern local material composition, electrical doping, chain conformation and chain orientation. More than one feature can be patterned simultaneously. Moreover, we keep the resolution of a light patterning technique and a relatively fast speed. The Spanish research institution is searching for a company interested in the development and application of the technology under a license agreement, and its also open to establish a research cooperation agreement with the company to optimize the technology, according to the company interests.